Samsung 1TB 850 Evo M.2 Solid State Drive MZ-N5E1T0BW
Model : MZ-N5E1T0BW
Key Features
Sequential Read Speed: Up to 540 MB/s Sequential Read **Performance may vary based on system hardware & configuration
Sequential Write Speed: 520
Random Read Speed: Random Read (4KB, QD32): Up to 97,000 IOPS Random Read* Performance may vary based on system hardware & configurationRandom Read (4KB, QD1): Up to 10,000 IOPS Random Read
Random Write Speed Random Write (4KB, QD32): Up to 89,000 IOPS Random Write* Performance may vary based on system hardware & configurationRandom Write (4KB, QD1): Up to 40,000 IOPS Random Write
Memory Speed: Samsung 48L 3D V-NANDSamsung 1 GB LPDDR3
GC (Garbage Collection): Auto Garbage Collection Algorithm
WWN Support: World Wide Name supported
Device Sleep Mode Support: Yes
Internal Storage: Yes
Temperature proof: Yes
General
Power Consumption (W): 50 mW* Actual power consumption may vary depending on system hardware & configurationAverage: 2.2 Watts *Maximum: 2.7 Watts (Burst mode)
Reliability (MTBF): 1.5 million hrs Reliability (MTBF)
Interface: SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
Environmental Specs
Operating Temperature: 32 – 158
Shock: 1,500G & 0.5ms (Half sine)
Storage
Capacity: 1,000 GB **Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
